maximum ratings (sot-563 package): (t a =25c) symbol units power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings q1: (t a =25c) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma maximum ratings d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a electrical characteristics q1: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =60v 10 na i cbo v cb =60v, t a =125 o c10 a i cev v ce =60v, v eb =3.0v 10 na i ebo v eb =3.0v 10 na bv cbo i c =10 a 100 145 v bv ceo i c =10ma 45 53 v bv ebo i e =10 a 6.0 v v ce(sat) i c =150ma, i b =15ma 0.09 0.15 v v ce(sat) i c =500ma, i b =50ma 0.12 0.50 v v be(sat) i c =150ma, i b =15ma 0.6 1.2 v v be(sat) i c =500ma, i b =50ma 2.0 v h fe v ce =10v, i c =0.1ma 100 210 h fe v ce =10v, i c =1.0ma 100 205 h fe v ce =10v, i c =10ma 100 205 h fe v ce =1.0v, i c =150ma 75 150 h fe v ce =10v, i c =150ma 100 300 h fe v ce =10v, i c =500ma 60 130 CMLM2205 multi discrete module ? surface mount silicon switching npn transistor and low v f silicon schottky diode sot-563 case central semiconductor corp. tm r0 (06-october 2004) description: the central semiconductor cmlm0205 is a multi discrete module ? consisting of a single npn transistor and schottky diode packaged in a space saving picomini? sot-563 case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. ? combination: small signal switching npn transistor and low v f schottky diode. ? complementary device: cmlm0705 marking code: c22 tm
central semiconductor corp. tm CMLM2205 multi discrete module ? surface mount silicon switching npn transistor and low v f silicon schottky diode r0 (06-october 2004) symbol test conditions min max units f t v ce =20v, i c =20ma, f=100mhz 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 25 pf nf v ce =10v, i c =100ma, r s =1.0k ? , f=1.0khz 4.0 db t d v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 10 ns t r v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 25 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma 225 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma 60 ns electrical characteristics d1 (t a =25c) i r v r = 10v 20 a i r v r = 30v 100 a bv r i r = 500a 40 v v f i f = 100a 0.13 v v f i f = 1.0ma 0.21 v v f i f = 10ma 0.27 v v f i f = 100ma 0.35 v v f i f = 500ma 0.47 v c t v r = 1.0v, f=1.0 mhz 50 pf a b c h g f d e e r0 12 3 65 4 sot-563 - mechanical outline lead code: 1) emitter q1 2) base q1 3) cathode d1 4) anode d1 5) anode d1 6) collector q1 marking code: c22 electrical characteristics q1 (continued)
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